ion beam sputtering

基本解释

WO_3 thin films prepared by Reactive Ion Beam Sputtering are amorphous at RT substrate temperature.
本文利用反应离子束溅射技术制备WO_3薄膜，在衬底温度为室温时，溅射制备的薄膜经电子束（?）
Ion beam sputtering deposited Ni was used as etching mask. The measured etching rates increased with the increasing ICP dc bias.
采用离子束溅射生长的N i作为刻蚀掩模，刻蚀速率随ICP直流偏压的增加而增加。
The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；