power bipolar transistor

基本解释

Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
介绍了一种用大功率绝缘栅极双极型晶体管（IGBT）模块SKM75GA L123D和驱动模块EXB840设计的直流升压斩波器。