junction depth

基本解释

Test the junction depth and doping concentrations.
检测扩散结深和掺杂浓度。
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Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
The series resistance (rs) of the PV cell may be due to the resistance of the metal contacts on the cell, ohmic losses in the front surface of the cell, impurity concentrations, or junction depth.
PV电池的串联电阻（rs）与电池上的金属触点电阻、电池前表面的欧姆损耗、杂志浓度和结深有关。